Abstract

Metal nanowires (NWs) are promising transparent conducting electrode (TCE) materials because of their excellent optoelectrical performance, intrinsic mechanical flexibility, and large-scale processability. However, the surface roughness, thermal/chemical instability, and limited electrical conductivity associated with empty spaces between metal NWs are problems that are yet to be solved. Here, we report a highly reliable and robust composite TCE/substrate all-in-one platform that consists of crystalline indium tin oxide (c-ITO) top layer and surface-embedded metal NW (c-ITO/AgNW-GFRH) films for flexible optoelectronics. The c-ITO top layer (thickness: 10–30 nm) greatly improves the electrical performance of a AgNW-based electrode, retaining its transparency even after a high-temperature annealing process at 250 °C because of its thermally stable basal substrate (i.e., AgNW-GFRH). By introducing c-ITO thin film, we achieve an extremely smooth surface (Rrms < 1 nm), excellent optoelectrical performance, superior thermal (> 250 °C)/chemical stability (in sulfur-contained solution), and outstanding mechanical flexibility (bending radius = 1 mm). As a demonstration, we fabricate flexible organic devices (organic photovoltaic and organic light-emitting diode) on c-ITO/AgNW-GFRH films that show device performance comparable to that of references ITO/glass substrates and superior mechanical flexibility. With excellent stability and demonstrations, we expect that the c-ITO/AgNW-GFRHs can be used as flexible TCE/substrate films for future thin-film optoelectronics.